Journal of Innovative Research In Engineering Technology and Management Science

In this research, an integrated method to analyse the degradation of performance in digital circuit is brought out through the transistor level to the gate level. To accurately predict circuit behaviour with time, by incorporating both gate-level analysis of timing with device-level ageing models the proposed methodology provides a framework to achieve this. The method also includes process variation, bias temperature instability (BTI) and hot carrier injection (HCI) effects to enable comprehensive deterioration monitoring over base cell libraries. The combination of gate-level timing models and SPICE-level degradation data can be used to efficiently and correctly identify the aging-related design issues by using the hybrid-simulation-based design evaluation. Experiments on benchmark circuits yield improvement in the accuracy of the forecast, as well as aging-prone key paths. This approach is enhanced in sophisticated semiconductor technology to ensure design optimisation that ensures long term reliability.

Keywords : Fifth keyword, Emerging Technologies, Scaling Process, Web-based Services, Education

Author : Suresh Yadav

Title : An Integrated Method for Transistor-to-Gate Level Performance Degradation Analysis

Volume/Issue : 2025;01(04)

Page No : 01-03

This research addresses design and functioning of single and dual channel heterostructure devices in sophisticated electrical devices application. Unlike homogeneous structures that have uniform structure, heterostructures, produced by combining materials with varying bandgaps, provide better efficiencies in terms of carrier mobility, scale and energy consumption. The impact of single channel, dual channel designs on electrical performance is also considered in the study and special focus is given to the variables involving subthreshold swing, on/off current ratio, and threshold voltage. A dual channel can be applied where speed and low power consumption are required because of the increased control of electrostatic and greater current drive. Simulation findings attest the advantages dual channel topologies provide in the short channel effect mitigation and dependability of devices. This work carries with it the promise of heterostructure engineering in next nanoscale transistor technologies.

Keywords : Strained silicon layers, CMOS technology Biaxial strain, SILVACO-TCAD

Author : Mohan Kumar

Title : A Single and Dual Channel Heterostructure Application

Volume/Issue : 2025;01(04)

Page No : 04-06

This research provides the application of the computer simulation as the powerful tool in the designing and optimisation of non-traditional separators and precipitators which are used in industrial processes. The complexity of the fluid behaviour, the behaviour of particles and the phase separation in non-standard geometries often prove to be a challenge to conventional design methods. It is the simulation approach that allows correct visualisation and analysis of the flow pattern, the trajectories of particles and performance in separation efficiency through highly detailed mathematical models, including computational models such as the Discrete Phase Modelling (DPM) and Computational Fluid Dynamics (CFD) model. This allows rapid design optimization, prototyping and prediction of performance without large amounts of physical testing. In case studies, the simulations could assist in the innovation and cost-effective development through detection of design issues, optimisation of parameters, and to a significant increase in the usefulness and efficiency of unusual separation systems.

Keywords : Mathematical modelling, Computer simulation, Electrostatic force

Author : Santhosh and Krishna Mohan

Title : Computer Simulation to Help Design Unconventional Precipitators and Separators

Volume/Issue : 2025;01(04)

Page No : 07-10